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Date: Sat, 15 Oct 2011 01:18:28 GMT

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HEADER opcode: REQUEST, status: NOERROR, id: 508
flag: qr aa rd REQUEST: 1, ANSWER: 6, AUTHORITY: 0, ADDITIONAL: 4

REQUEST SECTION:
compoundsemiconductor.net. IN ANY

ANSWER SECTION:
compoundsemiconductor.net. 3600 IN SOA ns1.livedns.co.uk. administrator.compoundsemiconductor.net. 1318968631 10800 3600 604800 3600
compoundsemiconductor.net. 3600 IN NS ns2.livedns.co.uk.
compoundsemiconductor.net. 3600 IN NS ns3.livedns.co.uk.
compoundsemiconductor.net. 3600 IN MX 10 mailserver.compoundsemiconductor.net.
compoundsemiconductor.net. 3600 IN NS ns1.livedns.co.uk.
compoundsemiconductor.net. 3600 IN A 213.171.218.134

SECTION NOTES:
ns3.livedns.co.uk. 43200 IN A 213.171.192.254
ns2.livedns.co.uk. 43200 IN A 213.171.193.250
ns1.livedns.co.uk. 43200 IN A 213.171.192.250
mailserver.compoundsemiconductor.net. 3600 IN A 213.171.216.114

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flag: qr aa rd REQUEST: 1, ANSWER: 6, AUTHORITY: 0, ADDITIONAL: 4

REQUEST SECTION:
compoundsemiconductor.net. IN ANY

ANSWER SECTION:
compoundsemiconductor.net. 3600 IN A 213.171.218.134
compoundsemiconductor.net. 3600 IN NS ns3.livedns.co.uk.
compoundsemiconductor.net. 3600 IN NS ns2.livedns.co.uk.
compoundsemiconductor.net. 3600 IN SOA ns1.livedns.co.uk. administrator.compoundsemiconductor.net. 1318968631 10800 3600 604800 3600
compoundsemiconductor.net. 3600 IN MX 10 mailserver.compoundsemiconductor.net.
compoundsemiconductor.net. 3600 IN NS ns1.livedns.co.uk.

SECTION NOTES:
ns3.livedns.co.uk. 43200 IN A 213.171.192.254
ns2.livedns.co.uk. 43200 IN A 213.171.193.250
mailserver.compoundsemiconductor.net. 3600 IN A 213.171.216.114
ns1.livedns.co.uk. 43200 IN A 213.171.192.250

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continent: EU, country: United Kingdom (GBR), city: Gloucester

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Basic information

website build using CSS

code weight: 85.06 KB

text per all code ratio: 16 %

title: Compound Semiconductors Gallium Indium Arsenide Nitride LED InP SiC GaN

description: Compound Semiconductor Indium arsenide – We are a magazine who publish news on the compound semiconductor industry, about Gallium nitride, Indium arsenide, silicon carbide, light emitting diode, Led's

keywords: compound semiconductors, semiconductors, Gallium nitride, silicon carbide, light emitting diode, Gallium arsenide, gallium nitride, lndium arsenide, silicon carbide, light emitting diode, molecular beam epitaxy, hydride vapour phase epitaxy, led's, InP, SiC, GaN, GaP

encoding: iso-8859-1

language: en

Website code analysis

one word phrases repeated minimum three times

two word phrases repeated minimum three times

three word phrases repeated minimum three times

B tags

Singulus’ new CIGS / CIS processing system selected

Epistar impressed with Candela inspection system for LEDs

Infinera 100Gb/s InP system takes the plunge

Research review: Dots bolster their telecom credentials

Research Review: Atom probe unveils electron-induced indium clustering

CPV market starts to gain momentum

Printed CIGS utility panels used in Ohio

TriQuint’s GaN RF MMIC switches reach 18 GHz

Northrop Grumman announces QCL for Its CIRCM offering

LED revenues to peak at $16.2B in 2014

NEDI to develop power devices and LEDs with Aixtron tools

Osram red LED smashes the 200 lm/W barrier

TriQuint’s GaN HEMT power transistor reduces costs

First CMOS integrated poly-SiGe pressure sensor

SETi grows AlInN materials on bulk GaN substrates

500 GHz transistors based on GaN … when and how?

NeoPhotonics completes acquisition of Santur

Integrated DVGAs for optimal performance in transceiver systems

New GaAs MMIC sets bandwidth benchmark

Cree continues to lead with even brighter LEDs

Bridgelux LED Arrays extend leadership in retail and hospitality lighting

Portable Raman instrument for material verification in cGMP

M/A-COM to showcase new products for multiple applications

IPG exonerated from IMRA patent infringement

Isofoton president inaugurates Chinese school affected by 2008 earthquake

NXP to showcase high performance RF at EuMW 2011

TriQuint one of 100 fastest-growing companies

Voltaix reaches out to Chinese market

GaAs/InAs nanolasers inspired by brightly-coloured birds

Direct integration of III-V lasers on silicon

Cheap and efficient solar cell from linked PbSe nanoparticles

GaN-on-silicon transistors are faster and smaller

Growing quality graphene on SiC

Playing ping-pong with electrons

Better solar cells for spacecrafts

Next generation solar cell technology on the horizon

Tetrapod quantum dots in mass production

Imec develops new SiGe via filling methods

GaN nanowires get into the groove

InAlGaAs/InP cylinder microlaser fabricated

Don’t blame Auger for LED droop

Dream screens from graphene

Displays will reignite the red laser market

NXP goes with GaN

Droop draws the crowds at ICNS-9

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